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Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures

✍ Scribed by Horváth, Zs.J.; Basa, P.; Molnár, K.Z.; Molnár, Gy.; Jászi, T.; Pap, A.E.

Book ID
121434275
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
761 KB
Volume
51
Category
Article
ISSN
1386-9477

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The effect of crystallinity of Ge nanocrystals on the charge storage properties of the metal oxide semiconductor (MOS) structure has been investigated. MOS structure with Ge nanocrystals embedded in the oxide has been fabricated by using atom beam sputtering technique. After annealing at 600 °C in A