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Effect of LDD structure and channel poly-Si thinning on a gate-all-around TFT (GAT) for SRAM's
✍ Scribed by Miyamoto, S.; Maegawa, S.; Maeda, S.; Ipposhi, T.; Kuriyama, H.; Nishimura, T.; Tsubouchi, N.
- Book ID
- 114537819
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 280 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9383
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