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Effect of Landau levels in energy bands on tunneling in semiconductors

โœ Scribed by P.K. Chakraborty


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
350 KB
Volume
52
Category
Article
ISSN
0022-3697

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For the analysis and design of semiconductor intersubband devices, accurate values for the Fermi energy and the subband electron population are needed. The effect of the positiondependent electron effective mass m \* (z) is commonly neglected in the determination of these two intersubband device par