Effects of chemical treatment on barrier
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M. Diale; F.D. Auret
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Article
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2009
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Elsevier Science
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English
β 193 KB
We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples