Effect of irradiation temperature on dynamic recovery in gallium nitride
โ Scribed by W. Jiang; W.J. Weber
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 260 KB
- Volume
- 242
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a
## Department of Radiation Biology, University of Rochester FOUR FIGURES Studies of potassium leakage from yeast following x-irradiation have shown a loss in the ability of the cell to retain this cation. The magnitude of this increased loss has been shown to be dose-dependent (Bair, Stannard and