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Effect of ionizing radiation on polysilane

โœ Scribed by Jun Kumagai; Ken-Ichi Oyama; Hiroshi Yoshida; Tsuneki Ichikawa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
391 KB
Volume
47
Category
Article
ISSN
0969-806X

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โœฆ Synopsis


ESR and gel permeation chromatographic measurements of poly(diethylsilane) and poly(cyclohexylmethylsilane) v-irradiated at temperatures between 77 K and 300 K were carried out to elucidate the mechanism of radiation-induced degradation of polysilanes. Radical species observed after the irradiation are not silyl-type radicals generated by the cleavage of the Si--Si bond but alkyl radicals generated by the scission of the C--H bond. The G value of the main-chain scission depends strongly on the irradiation temperature and dose. It is proposed that or-conjugation along the main chain allows the migration of the radiation energy to the weakest bond in the main chain where the direct scission of the bond is induced.


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