๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of ion species on apatite-forming ability of silicone elastomer substrates irradiated by cluster ion beams

โœ Scribed by Masakazu Kawashita; Rei Araki; Gikan H. Takaoka


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
655 KB
Volume
161
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Surface structure and apatite-forming ab
โœ M. Kawashita; S. Itoh; R. Araki; K. Miyamoto; G. H. Takaoka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 653 KB

## Abstract Polyethylene (PE) substrates were irradiated at a dose of 1 ร— 10^15^ ions/cm^2^ by the simultaneous use of oxygen (O~2~) cluster and monomer ion beams. The acceleration voltage for the ion beams was varied from 3 to 9 kV. Unirradiated and irradiated PE substrates were soaked for 7 days

Effects of ion irradiation on metallic n
โœ Patrick Kluth; Mark C. Ridgway ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 270 KB

Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were irradiated with 2.3 MeV Sn ions at ร€180 ยฐC. The NCs were investigated using cross-section transmission electron microscopy (TEM) as a function of irradiation dose. We observe nucleation of new nanocrystals as a c

Effects of Ga ion irradiation on growth
โœ J. Yanagisawa; H. Matsumoto; T. Fukuyama; Y. Shiraishi; T. Yodo; Y. Akasaka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 738 KB

The possibility of forming GaN layers on Ga-implanted SiN surfaces was investigated using electron cyclotron resonance-assisted molecular beam epitaxy (MBE). It is found that the GaN layer initially formed on the SiN surface by Ga implantation at room temperature was amorphous-like, but become to po