Effect of indium mole fraction on infrared light emitting diode (LED) device performance

✍ Scribed by Das, Naresh C.

• Book ID: 105366227
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 261 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026350

✦ Synopsis

Abstract

We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga~1−x~In~x~Sb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x = 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices.