𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of implanted helium on thermal diffusivities of SiC/SiC composites

✍ Scribed by T. Taguchi; N. Igawa; S. Jitsukawa; K. Shimura

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
129 KB
Volume
242
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

✦ Synopsis

The effect of implanted helium (He) on the thermal diffusivities of SiC/SiC composites was investigated. In the result, thermal diffusivities of SiC/SiC composites decreased after He implantation. The thermal diffusivities of implanted specimens were partly recovered by annealing. From the obtained results in this study, the defect concentration induced by He implantation in the specimens was estimated. The defect concentration rapidly decreased around 500 Β°C. The reason is that He release from SiC starts at 500 Β°C. The defect concentration induced by He implantation increased with increasing the amount of implanted He in the He implantation range less than 30 appm He.

πŸ“œ SIMILAR VOLUMES

Effect of laser field and thermal stress
Effect of laser field and thermal stress on diffusion in laser doping of SiC
✍ Sachin Bet; Nathaniel Quick; Aravinda Kar πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 407 KB

The electromagnetic field of lasers and non-equilibrium doping conditions enable laser doping of SiC with increased dopant diffusivity. Chromium, which acts as a double acceptor, has been laser-doped in SiC wafers. A thermal model is utilized to determine the temperature distribution at various dept