✦ LIBER ✦

Effect of image charge on double quantum dot evolution

✍ Scribed by S. Filippov; V. Vyurkov; L. Fedichkin

Book ID: 113850963
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 537 KB
Volume: 44
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2011.09.028

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of observation on quantum interf

Effects of observation on quantum interference in a laterally coupled double quantum dot using a quantum dot charge sensor

✍ T. Kubo; Y. Tokura; T. Hatano; S. Amaha; S. Teraoka; S. Tarucha 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 317 KB

Comment on “Charge-Qubit Operation of an

Comment on “Charge-Qubit Operation of an Isolated Double Quantum Dot”

✍ Astafiev, O.; Nakamura, Y.; Pashkin, Yu. A.; Yamamoto, T.; Tsai, J. S. 📂 Article 📅 2006 🏛 The American Physical Society 🌐 English ⚖ 43 KB

Charge-Qubit Operation of an Isolated Do

Charge-Qubit Operation of an Isolated Double Quantum Dot

✍ Gorman, J.; Hasko, D. G.; Williams, D. A. 📂 Article 📅 2005 🏛 The American Physical Society 🌐 English ⚖ 987 KB

Image-Charge and Excitonic Effects on th

Image-Charge and Excitonic Effects on the Oscillator Strength of Silicon Quantum Dots

✍ Bain, A. K.; Veerabhadra Rao, K.; Chand, Prem; Yamaguchi, Toshihisa; Wada, Mitsu 📂 Article 📅 1998 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 335 KB

Effect of Charge State in Nearby Quantum

Effect of Charge State in Nearby Quantum Dots on

✍ K. Takehana; Y. Imanaka; T. Takamasu; M. Henini 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 233 KB

Imaging of Si quantum dots as charge sto

Imaging of Si quantum dots as charge storage nodes

✍ R.A. Puglisi; S. Lombardo; G. Ammendola; G. Nicotra; C. Gerardi 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 336 KB

Nanoscale structures have been recently proposed as charge storage nodes due to their potential applications for future nanoscale memory devices. Our approach is based on the idea of using Si nanodots as discrete floating gates. To experimentally investigate such potential, we have fabricated MOS st