Hydrogen on semiconductor surfaces: Theo
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C.M. Bertoni; F. Finocchi; F. Bernardini; M.Buongiorno Nardelli
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Article
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1991
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Elsevier Science
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English
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The atomic geometry and the electronic structure of GaAs(l 1 0) and Si(1 I I) with full coverage of chemisorbed hydrogen is described in the scheme of the density functional theory and using norm-conserving pseudopotentials, as ideal prototypes of semiconductor surfaces interacting with hydrogen. Th