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Effect of hydrogen on the photoluminescence properties of Mn-implanted GaN

✍ Scribed by J.Q. Wang; P.P. Chen; H.B. Mao; Z.Q. Zhu; W. Lu


Book ID
108238747
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
287 KB
Volume
358
Category
Article
ISSN
0921-4526

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High-resolution X-ray diffraction and Raman scattering techniques have been used to analyse the impact of multiple energy hydrogen implantation with energy ranging from 40 to 120 keV on the structural properties of metal organic chemical vapour deposition grown unintentionally doped n-type Gallium N