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Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

✍ Scribed by A. Z. Kattamis; K. H. Cherenack; B. Hekmatshoar; I. Cheng; H. Gleskova; J. C. Sturm; S. Wagner


Book ID
126734389
Publisher
IEEE
Year
2007
Tongue
English
Weight
223 KB
Volume
28
Category
Article
ISSN
0741-3106

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