Effect of halide ion and applied potential on repassivation behaviour of Al-1 wt.%Si-0.5 wt.%Cu alloy
β Scribed by Su-Il Pyun; Eung-Jo Lee
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 821 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0013-4686
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β¦ Synopsis
Repassivation behaviour of Al-1 wt.%Si-0.5 wt.%Cu alloy has been investigated as a function of applied potential in 0.5 M Na,SO, solutions containing various chloride ion concentrations ranging from 0 to OSM in terms of potentiostatic current transients by using an abrading electrode technique. The current transients obtained were found to be classified into three groups. The anodic processes included in each group are as follows: (i) only repassivation related to the formation of passivating oxide in low concentrations (O-0.01 M); (ii) competition between oxide repassivation and film breakdown, the growth of a stable pit after an induction time of t,, followed by a uniform metal dissolution through aluminium salt film in intermediate concentrations (0.05-0.3 M); (iii) only a uniform metal dissolution through aluminium salt film in high concentrations (> 0.3 M). Transition from (i) to (ii) occurs at 0.05 M Cl-, regardless of applied potential and (ii) to (iii) transition does at -0.1 Vjsce and 0.3 M Cl-. In connection with the results of the current-time curves, potential-time curves measured on oxide-covered Al alloy in various halide (F-, Cl-, Br-and I-) solutions demonstrated that the attack by halide ions occurs on the bare metal surface simultaneously with the formation of anodic oxide film.
π SIMILAR VOLUMES
Si-0.1 wt% Zr-0.1 wt% Ti alloys were used to trace the effect of Zr and Ti additions on the behaviour of the steady state creep. After solid solution treatment specimens of both alloys were aged at 623, 673, 723 and 773 K and creep tests were performed at room temperature by applying stresses of 60.