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Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3 μm application

✍ Scribed by Wicaksono, S.; Yoon, S. F.; Loke, W. K.; Tan, K. H.; Lew, K. L.; Zegaoui, M.; Vilcot, J. P.; Decoster, D.; Chazelas, J.


Book ID
121723399
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
439 KB
Volume
102
Category
Article
ISSN
0021-8979

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