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Effect of geometric parameters of schottky diodes on skin effect resistance

✍ Scribed by V. L. Rvachev; V. F. Kravchenko; T. I. Sheiko


Publisher
Springer US
Year
1993
Tongue
English
Weight
197 KB
Volume
36
Category
Article
ISSN
0543-1972

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Effect of hydrogen on interface of metal
✍ S.P. Nehra; M. Singh πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 666 KB

The effect of hydrogen on p-type Si/Mn and Si/Co Schottky diode has been investigated in present studies. The variations of I-V characteristics suggested that the rectifying act of these diodes change with variation of hydrogen pressure, which is due to the diffusion of hydrogen through the Mn and C