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Effect of Ge4+Ion on Electrical Properties of (La0.1Ca0.9)(Mn1−xGex)O3

✍ Scribed by Hideki Taguchi; Masanori Sonoda; Mahiko Nagao


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
252 KB
Volume
140
Category
Article
ISSN
0022-4596

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✦ Synopsis


Orthorhombic perovskite-type (La 0.1 Ca 0.9 )(Mn 1؊x Ge x )O 3 was synthesized in the range (0.004 4x4 40.10). Since the ionic radius of the Ge 4؉ ion is equal to that of the Mn 4؉ ion, the (Mn, Ge)-O(1, 2) distances and the angles for (Mn, Ge)-O(1, 2)-(Mn, Ge) are independent of the composition (x). From the measurement of the electrical resistivity ( ), all manganates exhibit a metal-insulator transition. With increasing x, the metal-insulator transition temperature (T t ) increases and d /dT decreases. The cation-anion-cation overlap integrals are weakened by the Ge 4؉ ion.


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