Tip-enhanced Raman spectroscopy of 6H-Si
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Katrin F. Domke; Bruno Pettinger
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Article
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2009
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John Wiley and Sons
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English
β 352 KB
## Abstract We have characterized 6HβSiC substrates with tipβenhanced Raman spectroscopy in a broad spectral range between 100 and 3000 cm^β1^. A few adlayers of graphene previously grown on the semiconductor's C surface enabled us to approach the Au tip of a scanning tunneling microscope (STM) int