The effect of the parabolic and nonparabolic band structures on the longitudinal and transverse resistivities in a semiconductor such as n-type InSb in the presence of a dc magnetic field directed along the propagation of ultrasound is investigated using a quantum mechanical treatment which is valid at high frequencies and in strong magnetic fields. We discuss this effect in the limiting cases of nondegenerate and degenerate statistics. It is found that the longitudinal and transverse resistivities in nondegenerate materials change with the dc magnetic field for the nonparabolic band structure. For the parabolic model, the longitudinal resistivity does not depend upon the dc magnetic field. In degenerate materials, however, the longitudinal and transverse resistivities for both parabolic and nonparabolic band structures will oscillate with the dc magnetic field. These osci!lations are interpreted as the so-called "'giant quantum oscillations" which occur in a degenerate electron gas. The dependence on the dc magnetic field arises from the nonlinear effect of the energy bands due to the nonparabolicity of the energy-band structure, and from the resonant interaction between the ultrasound and conduction electrons in degenerate materials.