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Effect of electron excitation on radiation damage in fce metals

✍ Scribed by A. Iwase; T. Iwata


Book ID
113285600
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
812 KB
Volume
90
Category
Article
ISSN
0168-583X

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Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a