Effect of 4MeV electron beam irradiation
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K. Siraj; M. Khaleeq-ur-Rahman; M.S. Rafique; T. Nawaz
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Article
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2011
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Elsevier Science
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English
β 582 KB
Pulsed KrF excimer laser is used to deposit tetrahedral amorphous carbon (ta-C) thin films on Si (1 1 1) single crystal substrates at room temperature under vacuum $10 Γ6 mbars. The pristine deposited films are then irradiated by 4 MeV electron beam at doses varying from 1000 to 4000 cGy. Analysis t