Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 Β± Β±6 to 10 Β± Β±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp
β¦ LIBER β¦
Effect of electric fields on the transmission of a double heterostructure based on GaN with a quantum well
β Scribed by N. S. Grushko; L. N. Potanakhina
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 294 KB
- Volume
- 47
- Category
- Article
- ISSN
- 1573-9228
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