Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates
✍ Scribed by Yamaguchi, Masafumi; Yamamoto, Akio; Itoh, Yoshio
- Book ID
- 118036776
- Publisher
- American Institute of Physics
- Year
- 1986
- Tongue
- English
- Weight
- 493 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.336439
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Doped layers made of nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells. Their combination with optimized deposition processes for the silicon intrinsic layers is shown to allow for an increased resilience of the cell desig
## Abstract The aim of this work is to study the effect of Na on low temperature growth of CIGS solar cells on polyimide (PI) substrates. The Na is introduced via evaporation of a NaF precursor layer prior to the absorber deposition. As reported previously, the devices at nominal __T__~sub,max~ = 5