Effect of dislocations on 1/f noise of long wavelength infrared photodiodes fabricated with HgCdTe layers grown on GaAs by metalorganic vapor phase epitaxy

✍ Scribed by S. Murakami; H. Nishino; H. Ebe; Y. Nishijima

• Book ID: 112812651
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 473 KB
• Volume: 24
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02653066