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Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

✍ Scribed by Dollfus, P.; Bournel, A.; Galdin, S.; Barraud, S.; Hesto, P.

Book ID: 114617409
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 433 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.826844

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