## Abstract We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11β20)GaN, semipolar (11β22)GaN, and (1β101)GaN microstripes grown by selective metalβorganic vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples e
β¦ LIBER β¦
Effect of diffusion from a lateral surface on the rate of GaN nanowire growth
β Scribed by Sibirev, N. V.; Tchernycheva, M.; Cirlin, G. E.; Patriarche, G.; Harmand, J. C.; Dubrovskii, V. G.
- Book ID
- 119884634
- Publisher
- Springer
- Year
- 2012
- Tongue
- English
- Weight
- 530 KB
- Volume
- 46
- Category
- Article
- ISSN
- 1063-7826
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