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Effect of different type intermediate layers on band structure and gain of Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y/-GaAs quantum well lasers

✍ Scribed by Wei Zhang; Ying-Qiang Xu; Rong-Han Wu

Book ID: 119800613
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 271 KB
Volume: 15
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2003.818264

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