We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples
β¦ LIBER β¦
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
β Scribed by I. G. Atabaev; N. A. Matchanov; M. U. Hajiev; V. Pak; T. M. Saliev
- Book ID
- 111444624
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 180 KB
- Volume
- 44
- Category
- Article
- ISSN
- 1063-7826
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