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Effect of density on the diffusion barrier property of TiNx films between Cu and Si

✍ Scribed by Wen-Horng Lee; Yu-Lin Kuo; Hong-Ji Huang; Chiapyng Lee

Book ID
113780773
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
194 KB
Volume
85
Category
Article
ISSN
0254-0584

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TiN layers have been used as diffusion barriers to prevent intermixing of aluminium and silicon. During TiN deposition on Ti by reactive sputtering, oxygen has been introduced in-situ into the barrier. Depending on the oxygen flow, a different content of oxygen has been incorporated into the TiN lay