## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__βplane GaN and __c__βplane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__β and __c__βpla
β¦ LIBER β¦
Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m-plane sapphire substrate
β Scribed by Lee, Seunga ;Jang, Jongjin ;Lee, Kwan-Hyun ;Hwang, Jung-Hwan ;Jeong, Joocheol ;Nam, Okhyun
- Book ID
- 112180970
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 549 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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