Effect of Cr doping on HgTe properties

✍ Scribed by Asotski, Valeriy V. ;Lashkarev, George V. ;Radchenko, Mykhailo V. ;Frasunyak, Vasiliy M.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 155 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200673007

✦ Synopsis

Abstract

Electrical and magnetic investigations of HgTe doped by Cr are presented. The low temperature features of Hall coefficient magnetoresistance, thermoelectric power and magnetic susceptibility were revealed. They point out to the creation of an impurity level by the Cr dopant and to the behavior of Cr^2+^(d^4^) as Van–Vleck ion. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)