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Effect of channel length on the threshold voltage degradation of hydrogenated amorphous silicon TFTs due to the drain bias stress

✍ Scribed by Kwang-Sub Shin; Jae-Hoon Lee; Sang-Myeon Han; In-Hyuk Song; Min-Koo Han


Book ID
116668939
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
199 KB
Volume
352
Category
Article
ISSN
0022-3093

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