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Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators

โœ Scribed by Zhou, Gui-rong; Geis, Michael W.; Spector, Steven J.; Gan, Fuwan; Grein, Matthew E.; Schulein, Robert T.; Orcutt, Jason S.; Yoon, Jung U.; Lennon, Donna M.; Lyszczarz, Theodore M.


Book ID
115409026
Publisher
Optical Society of America
Year
2008
Tongue
English
Weight
788 KB
Volume
16
Category
Article
ISSN
1094-4087

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Effect of nitrogen doping on the minorit
โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si