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Effect of baseband impedance on FET intermodulation

✍ Scribed by Brinkhoff, J.; Parker, A.E.

Book ID
114659782
Publisher
IEEE
Year
2003
Tongue
English
Weight
385 KB
Volume
51
Category
Article
ISSN
0018-9480

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πŸ“œ SIMILAR VOLUMES

Effect of gate-to-source capacitance of
Effect of gate-to-source capacitance of high-power Si-LDMOS FET on the asymmetrical intermodulation and modulation bandwidth of base-station amplifiers
✍ Younkyu Chung πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 141 KB

## Abstract This letter presents the effect of the gate‐to‐source capacitance (C~gs~) on the imbalance of the intermodulation distortion (IMD) and modulation bandwidth of Si‐LDMOS field effect transistor (FET) high‐power base‐station PAs. It is revealed that the strong C~gs~ nonlinearity at the inp