Effect of annealing temperature of a novel Sol–gel process on the electrical properties of low voltage ZnO-based ceramic films

✍ Scribed by Shenglin Jiang; Haibo Zhang; Yanqiu Huang; Meidong Liu; Ruzhan Lin

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 187 KB
• Volume: 117
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.12.049

✦ Synopsis

The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic films was studied by a novel sol-gel process. The experiment results show that Zn 7 Sb 2 O 12 and ZnCr 2 O 4 phase can form in a lower annealing temperature (550 • C) by the solution doping, and the pyrochlore phase is not detected by X-ray diffractometer (XRD) from 550 • C to 950 • C. Sb 2 O 3 phase can change to spinel phase completely; Bi 2 O 3 and ZnO may be vaporized when the annealing temperature reaches 750 • C. The ZnO-based ceramic films with nonlinear coefficient of 20, nonlinear voltage of 5 V and the leakage current density of 0.5 A/mm 2 can be gained at the proper annealing temperature.