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Effect of annealing on the properties of low-k nanoporous SiO2 films prepared by sol–gel method with catalyst HF

✍ Scribed by Z.W. He; X.Q. Liu; D.Y. Xu; Y.Y. Wang

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
262 KB
Volume
46
Category
Article
ISSN
0026-2714

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✦ Synopsis

Using hydrofluoric acid (HF) as catalyst, nanoporous SiO 2 thin film was synthesized by sol-gel method. By scanning electron microscopy, Fourier transform infrared spectra, thermo gravimetric and differential thermal analysis, ellipsometry, capacitance-voltage and current-voltage measurements, the effects of annealing on film properties were discussed in detail. The introduction of HF results in the less polarizability, the preferable microstructures and the improved thermal stability of the nanoporous silica films. After thermal annealing at 450 °C, the crack-free films with strong hydrophobicity, ultra-low dielectric constant of 1.65, porosity of 78%, and leakage current density of 1.3 • 10 À8 A cm À2 were obtained.

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