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Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting

✍ Scribed by G. I. Voronkova; A. V. Batunina; V. V. Voronkov; V. N. Golovina; A. S. Gulyaeva; N. B. Tyurina; M. G. Mil’vidskiĭ

No coin nor oath required. For personal study only.

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