The binding energy of a donor impurity in a spherical GaAsΒ±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation
Effect of an intense laser field on donor impurities in spherical quantum dots
β Scribed by Y.P. Varshni
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 184 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The effect of an intense laser field on the binding energy of hydrogenic impurity states with an impurity atom located at the center of a spherical quantum dot confined by an infinite barrier potential are studied as a function of the dot radius and of the intensity and frequency of the laser field. Accurate binding energies are obtained for the 1s, 2s and 2p states by numerical integration of the SchrΓΆdinger equation. The binding energies are found to increase with decrease in the dot radius, and decrease with increase in the value of the laser field amplitude Ξ» in all cases.
π SIMILAR VOLUMES
The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results
Many people have studied the conductance properties through an array of anti-dots, especially since the observation of Weiss oscillations. In most cases, however, in which the recursive GreenΕΊs functions are used on a spatial lattice, periodic boundary conditions are employed. In this paper, we anal