Effect of an electric field on the binding energy of impurities in semiconductor quantum wells
โ Scribed by Wen-ming Liu; Min Cai
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 535 KB
- Volume
- 154
- Category
- Article
- ISSN
- 0921-4526
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๐ SIMILAR VOLUMES
The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results
Using the potential morphing method in the effective mass approximation, we have studied the behavior of the impurity binding energy as a function of the impurity position, for different applied electric fields, different Al concentrations at the well center, in strong, intermediate and weak confine