The effect of an electrical field on the
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S. Väyrynen; J. Härkönen; E. Tuominen; I. Kassamakov; E. Tuovinen; J. Räisänen
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Article
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2011
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Elsevier Science
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English
⚖ 584 KB
The influence of an electrical field on the formation of defects in silicon particle detectors during particle irradiation was studied. Silicon pad detectors processed on Float Zone and Magnetic Czochralski silicon were irradiated with 7-MeV protons between the fluences of 5 Â 10 12 and 1.25 Â 10 13