Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model

✍ Scribed by R.B. Wehrspohn; S.C. Deane; I.D. French; M.J. Powell

• Book ID: 117150308
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 127 KB
• Volume: 266-269
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/s0022-3093(99)00777-2