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Edge of the two-dimensional electron gas in a gated heterostructure

โœ Scribed by Ivan A. Larkin; John H. Davies


Book ID
116068512
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
313 KB
Volume
361-362
Category
Article
ISSN
0039-6028

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AlGaN=GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN=GaN heterostructures have recently been discussed. In this paper, we have studi