✦ LIBER ✦
Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by p+ substrate
✍ Scribed by C. C. Meng
- Book ID
- 102516663
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 86 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The p^+^ substrate plays an important role on the edge stability of p^+^n multiquantum well avalanche transit time devices. The p^+^n multiquantum well avalanche transit time devices on n^+^ substrate easily burn out along the device edge at low breakdown current. The same structure on p^+^ substrate can have the desired band diagram on device edge to eliminate edge burn‐out and CW operation is thus achieved at 100.3 GHz. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 196–197, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11326