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Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001)

✍ Scribed by D. I. Florescu; D. S. Lee; S. M. Ting; J. C. Ramer; E. A. Armour

No coin nor oath required. For personal study only.

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