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[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Innovative Low damage Silicon Nitride Passivation of 100nm In0.45AlAs/In0.4GaAs Metamorphic HEMTs with Remote ICPCVD

✍ Scribed by Kim, Donghwan; Maeng, Jimin; Kim, Sungwon; Her, Jincherl; Yeon, Seongjin; Kim, Harqkyun; Seo, Kwangseok


Book ID
121350171
Publisher
ECS
Year
2007
Weight
806 KB
Volume
6
Category
Article

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