Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers
✍ Scribed by Jan Schmidt; Armin G. Aberle
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 155 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1062-7995
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✦ Synopsis
A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish ®lm is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides dierential surface recombination velocities in the 30±70 cm s 71 range on p-as well as n-type silicon wafers.