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Dynamics of stochastically induced and spatially inhomogeneous impurity breakdown in semiconductors

✍ Scribed by R. E. Kunz; E. Schöll


Book ID
105961251
Publisher
Springer
Year
1995
Tongue
English
Weight
625 KB
Volume
99
Category
Article
ISSN
1434-6036

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📜 SIMILAR VOLUMES


A variational treatment of the potential
✍ P. Csavinszky 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 258 KB

## Abstract The primary purpose of the present paper consists in obtaining a correction to Dingle's potential for a (point) impurity ion (embedded) in Si or Ge. This goal is accomplished by making use of a variational principle in taking into account the effect of the spatial variation of the diele