Dynamical structure analysis applied to Si and Ge

✍ Scribed by J. Kulda; Y. Ishii; S. Katano

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 181 KB
• Volume: 213-214
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(95)00178-c

✦ Synopsis

The phonon frequencies of Ge, when rescaled according to the difference in atomic masses and lattice parameters, practically coincide with the results of ab initio calculations for Si. Some difference is observed with respect to the observed frequencies of TA modes along [100] and, in particular, [110] in Si. The supplementary information obtained from the measured structure factors of the [110] E 3 modes in Si and Ge permits us to locate the most important part of the difference between the lattice dynamics of Si and Ge in a coupling term responsible for mixing the [110] TA1 and LO modes.