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Dynamic Simulation of Toggle Mode MRAM Operating Field Margin

✍ Scribed by Shengyuan Wang; Fujiwara, H.; Jian Dou; Zhanjie Li; Yiming Huai

Book ID
114652016
Publisher
IEEE
Year
2007
Tongue
English
Weight
346 KB
Volume
43
Category
Article
ISSN
0018-9464

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## Abstract A micromagnetic simulation is carried out to examine the effects of the shape of exchange‐coupled trilayer cells on the magnetization switching behavior, in an effort to reduce the switching field in the toggle‐mode magnetic random access memory. Two different shapes of rectangular and