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State-of-the-art large-area photovoltaic (PV) detectors fabricated in HgCdTe grown by molecular beam epitaxy (MBE) have been demonstrated for the Crosstrack Infrared Sounder (CrIS) instrument. Large-area devices (1 mm in diameter) yielded excellent electrical and optical performance operating at 81 K for ฮปc ~ 15ยตm, at 98 K for ฮป c ~ 9ยตm, and ฮปc ~ 5ยตm spectral cutoffs. Fabricated detectors have neartheoretical electrical performance, and Anti Reflection coated quantum efficiency (QE) is greater than 0.70. Measured average R o A at 98 K is 2.0 x 10 7 โฆcm 2 , and near-theoretical QEs greater than 0.90 were obtained on detectors with ฮปc ~ 5-ยตm spectral cutoffs. These state-ofthe-art large-area PV detector results reflect high-quality HgCdTe grown by MBE on CdZnTe substrates in all three spectral bands of interest.
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